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Synchronous dynamic random access memory : ウィキペディア英語版
Synchronous dynamic random-access memory
Synchronous dynamic random access memory (SDRAM) is dynamic random access memory (DRAM) that is synchronized with the system bus. Classic DRAM has an asynchronous interface, which means that it responds as quickly as possible to changes in control inputs. SDRAM has a synchronous interface, meaning that it waits for a clock signal before responding to control inputs and is therefore synchronized with the computer's system bus. The clock is used to drive an internal finite state machine that pipelines incoming commands. The data storage area is divided into several banks, allowing the chip to work on several memory access commands at a time, interleaved among the separate banks. This allows higher data access rates than with asynchronous DRAM.
Pipelining means that the chip can accept a new command before it has finished processing the previous one. In a pipelined write, the write command can be immediately followed by another command, without waiting for the data to be written to the memory array. In a pipelined read, the requested data appears after a fixed number of clock cycles after the read command (latency), clock cycles during which additional commands can be sent. This delay is called the SDRAM latency and is an important performance parameter.
SDRAM is widely used in computers; after the original SDRAM, further generations of double data rate RAM have entered the mass market DDR (also known as DDR1), DDR2, DDR3 and DDR4, with the latest generation (DDR4) released in second half of 2014.
== SDRAM history ==

Although the concept of synchronous DRAM has been known since at least the 1970s and was used with early Intel processors, it was only in 1993 that SDRAM began its path to universal acceptance in the electronics industry. In 1993, Samsung introduced its KM48SL2000 synchronous DRAM, and by 2000, SDRAM had replaced virtually all other types of DRAM in modern computers, because of its greater performance.
SDRAM latency is not inherently lower (faster) than asynchronous DRAM. Indeed, early SDRAM was somewhat slower than contemporaneous burst EDO DRAM due to the additional logic. The benefits of SDRAM's internal buffering come from its ability to interleave operations to multiple banks of memory, thereby increasing effective bandwidth.
Today, virtually all SDRAM is manufactured in compliance with standards established by JEDEC, an electronics industry association that adopts open standards to facilitate interoperability of electronic components. JEDEC formally adopted its first SDRAM standard in 1993 and subsequently adopted other SDRAM standards, including those for DDR, DDR2 and DDR3 SDRAM.
SDRAM is also available in registered varieties, for systems that require greater scalability such as servers and workstations.
Today, the world's largest manufacturers of SDRAM include: Samsung Electronics, Panasonic, Micron Technology, and Hynix.

抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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